Temperature Dependence and Magnetic Field Dependence of Quantum Point Contacts in Si-Inversion Layers
| Autor: | S.L. Wang, P.C. van Son, van Bart Wees, T.M. Klapwijk |
|---|---|
| Přispěvatelé: | Zernike Institute for Advanced Materials |
| Jazyk: | angličtina |
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Condensed matter physics CONDUCTANCE SUBBANDS Conductance Heterojunction Quantum Hall effect Condensed Matter Physics Thermal conduction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Magnetic field Electrical resistivity and conductivity Ballistic conduction General Materials Science Electrical and Electronic Engineering Conductance quantum RESISTANCE |
| Zdroj: | Superlattices and Microstructures, 12(2), 191-193 |
| ISSN: | 0749-6036 |
| Popis: | The conductance of ballistic point contacts in high-mobility Si-inversion layers has been studied at several temperatures between 75 and 600 mK both without and in a magnetic field (up to 12T). When the width of constriction is varied in zero magnetic field, step-like features at multiples of 4e2/h are observed in the conductance that are independent of temperature. In the presence of a magnetic field, the spin and valley degeneracies are lifted and the conductance is quantized at multiples of e2/h. The transition from zero-field quantized conduction to the quantum Hall effect provides a direct demonstration of the magnetic depopulation of one-dimensional subbands in the constriction. |
| Databáze: | OpenAIRE |
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