Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases

Autor:	Nitu Syed, Alastair Stacey, Ali Zavabeti, Chung Kim Nguyen, Benedikt Haas, Christoph T. Koch, Daniel L. Creedon, Enrico Della Gaspera, Philipp Reineck, Azmira Jannat, Matthias Wurdack, Sarah E. Bamford, Paul J. Pigram, Sherif Abdulkader Tawfik, Salvy P. Russo, Billy J. Murdoch, Kourosh Kalantar-Zadeh, Chris F. McConville, Torben Daeneke
Rok vydání:	2022
Předmět:	General Engineering General Physics and Astronomy General Materials Science
Zdroj:	ACS Nano. 16:5476-5486
ISSN:	1936-086X 1936-0851
DOI:	10.1021/acsnano.1c09636
Popis:	Indium nitride (InN) has been of significant interest for creating and studying two-dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in ultrathin doped and undoped 2D InN nanosheets featuring high carrier mobilities at room temperature. The synthesis is carried out via a two-step liquid metal-based printing method followed by a microwave plasma-enhanced nitridation reaction. Ultrathin InN nanosheets with a thickness of ∼2 ± 0.2 nm were isolated over large areas with lateral dimensions exceeding centimeter scale. Room temperature Hall effect measurements reveal carrier mobilities of ∼216 and ∼148 cm
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a321c3a52f165f3db600daf137d30394 https://doi.org/10.1021/acsnano.1c09636 Zobrazit plný text záznamu