Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy
| Autor: | Dimitris Pavlidis, Yidir Androussi, Didier Decoster, David Troadec, Arnaud Stolz, Eunjung Cho, Elhadj Dogheche |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Department of High Frequencies Electronics, Teschniche Universität Darmstadt, Laboratoire de structures et propriétés de l'état solide - UMR 8008 (LSPES), Université de Lille, Sciences et Technologies-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université de Lille, Sciences et Technologies |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
III-V semiconductors Physics and Astronomy (miscellaneous) Band gap Superlattice Refractive index Gallium nitride 02 engineering and technology Epitaxy 01 natural sciences Waveguide (optics) [SPI]Engineering Sciences [physics] chemistry.chemical_compound 0103 physical sciences 010302 applied physics Optical properties business.industry Wide-bandgap semiconductor Prisms 021001 nanoscience & nanotechnology Optical waveguides chemistry Sapphire [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics 0210 nano-technology business |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2011, 98, pp.161903. ⟨10.1063/1.3582055⟩ Applied Physics Letters, American Institute of Physics, 2011, 98, pp.161903-1-3. ⟨10.1063/1.3582055⟩ Applied Physics Letters, 2011, 98, pp.161903-1-3. ⟨10.1063/1.3582055⟩ |
| ISSN: | 0003-6951 |
| Popis: | International audience; The waveguideproperties are reported for wide bandgap gallium nitride(GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism coupling technique in order to evaluate its properties and, in particular, the refractive index dispersion and the propagation loss. In order to identify the structural defects in the samples, we performed transmission electron microscopy analysis. The results suggest that AlN/GaN SPS plays a role in acting as a barrier to the propagation of threading dislocations in the active GaN epilayer; above this defective region, the dislocations density is remarkably reduced. The waveguide losses were reduced to a value around 0.65dB/cm at 1.55μm, corresponding to the best value reported so far for a GaN-based waveguide. |
| Databáze: | OpenAIRE |
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