Photo-gating Carbon Nanotube Transistors
| Autor: | O. M. Castellini, Mark A. Eriksson, Robert J. Hamers, J. M. Simmons, Matthew S. Marcus |
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| Rok vydání: | 2007 |
| Předmět: |
Nanotube
Materials science Silicon General Physics and Astronomy chemistry.chemical_element Physics::Optics FOS: Physical sciences 02 engineering and technology Carbon nanotube Substrate (electronics) 01 natural sciences 7. Clean energy law.invention law 0103 physical sciences 010302 applied physics Photocurrent Condensed Matter - Materials Science business.industry Photoconductivity Transistor Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Carbon nanotube field-effect transistor chemistry Optoelectronics 0210 nano-technology business |
| DOI: | 10.48550/arxiv.0710.1264 |
| Popis: | Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light absorption in the silicon substrate generates a photovoltage that can electrically gate the nanotube device. The photocurrent induced by the changing gate voltage can be significantly larger than that due to direct electron-hole pair generation in the nanotube. The dominance of photogating in these devices is confirmed by the power and position dependence of the resulting photocurrent. The power dependence is strongly non-linear and photocurrents are measured through the device even when the laser illuminates up to 1~mm from the nanotube. Comment: 18 pages, 7 figures |
| Databáze: | OpenAIRE |
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