25 nm Single-Crystal Silicon Nanowires Fabricated by Anisotropic Wet Etching
| Autor: | Kazuhiro Hane, Hoang Manh Chu, Minh Nguyen, Hung N. Vu |
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| Rok vydání: | 2017 |
| Předmět: |
Fabrication
Materials science Silicon business.industry Biomedical Engineering Nanowire chemistry.chemical_element Bioengineering Nanotechnology General Chemistry Condensed Matter Physics law.invention chemistry law Etching (microfabrication) Optoelectronics General Materials Science Undercut Dry etching Reactive-ion etching Photolithography business |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 17:1525-1529 |
| ISSN: | 1533-4880 |
| Popis: | We report a top-down method for fabricating ultra-high aspect ratio single-crystal silicon nanowires. The fabrication method is based on the standard photolithography technique and anisotropic wet etching of the single-crystal silicon in KOH solution. SiO₂ mask nanolines used for patterning single-crystal silicon nanowires are formed by the undercut etching of thin SiO₂ layer in buffered hydrofluoric solution. The minimum width of the SiO₂ mask nanolines are 50 nm. The length of SiO₂ mask nanolines is 2 cm. The single-crystal silicon nanowires have been successfully transferred from the SiO₂ mask nanolines by KOH anisotropic wet-chemical etching. The minimum width of the silicon nanowire has obtained to be 25 nm. The fabricated single-crystal silicon nanowires have trapezoidal and triangular cross sections, which are useful for applications in nanoelectronic and nanophotonic elements. |
| Databáze: | OpenAIRE |
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