Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p–i–n Diode
| Autor: | Süleyman Özçelik, Adem Tataroğlu, S. Ş. Çetin, Yunus Özen, Tunc Sertel, T. Asar |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Equivalent series resistance Silicon business.industry chemistry.chemical_element Thermionic emission 02 engineering and technology Substrate (electronics) Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Ohmic contact Molecular beam epitaxy Diode |
| Zdroj: | Journal of Electronic Materials. 46:4590-4595 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | In this study, the electrical properties of dilute nitride GaAsPN/GaPN multi-quantum well p-i-n diodes were investigated by using current-voltage (I-V) measurements at room temperature. The diode structure was grown on silicon (Si) (100) substrate misoriented by 4A degrees towards the [110] direction using the molecular beam epitaxy technique, and ohmic contacts were formed on this structure by metallization process. The forward bias I-V characteristics of the diode were analyzed by the thermionic emission theory. Ideality factor (n), barrier height (I broken vertical bar(b)) and series resistance (R (s)), which are the main electrical parameters of diodes, were determined from I-V characteristic, Norde and Cheung methods. The obtained experimental results were compared with each other. From the I-V characteristic, the values of n and I broken vertical bar(b) were found to be 2.86 eV and 0.69 eV, respectively. The barrier height values, which were obtained from the Norde function and I-V characteristic, were in good agreement with each other. It was also found that the values of series resistance determined from the Norde and Cheung functions were compatible with each other. |
| Databáze: | OpenAIRE |
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