The impact of Ir doping on the electrical properties of YbFe1−xIrxO3 perovskite-oxide compounds
| Autor: | Zehra Durmus, F.M. Coskun, B. Zengin Kurt, Abdulmecit Turut, M. Coskun, Ozgur Polat, Mujdat Caglar |
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| Přispěvatelé: | ZENGİN KURT, BELMA |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Doping Analytical chemistry Oxide Dielectric Materials in Electronics cilt.31 ss.1731-1744 2020 [Coskun M. Polat O. Coskun F. Kurt B. Durmus Z. Caglar M. Turut A. -The impact of Ir doping on the electrical properties of YbFe1−xIrxO3 perovskite-oxide compounds- Journal of Materials Science] Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Electrical resistivity and conductivity 0103 physical sciences Dissipation factor Particle size Electrical and Electronic Engineering Perovskite (structure) |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 31:1731-1744 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-019-02691-1 |
| Popis: | In this study, YbFe1−xIrxO3 (x = 0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1–107 Hz) and temperature (between − 100 and 100 °C with 20 °C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped. |
| Databáze: | OpenAIRE |
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