Low-pressure chemical vapor deposition of GaN epitaxial films

Autor:	Bruno K. Meyer, G Steude, I. Dirnstorfer, W. Kriegseis, M. Topf, S. Fischer, D. Meister
Rok vydání:	1998
Předmět:	Photoluminescence Doping Analytical chemistry chemistry.chemical_element Gallium nitride Chemical vapor deposition Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound chemistry Materials Chemistry Sapphire Gallium Luminescence
Zdroj:	Scopus-Elsevier
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)00285-1
Popis:	GaN films were grown epitaxially on sapphire and 6H-SiC substrates by low-pressure chemical vapor deposition (LPCVD) using gallium(III) chloride and ammonia as gallium and nitrogen precursor, respectively. The properties of these samples were examined by X-ray diffraction, Hall effect measurements, secondary-ion mass spectroscopy (SIMS) and photoluminescence (PL). All GaN layers exhibit high free carrier concentrations between n = 2 x 10 18 and 5 x 10 19 cm - 3 caused by unintentional n-type doping. We provide evidence that this high unintentionally doping is linked to the oxygen content in the films. The correlation between the optical properties with respect to position and line shape of the band-edge luminescence and the electrical properties. i.e. the free carrier concentration, is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a26442fe5ec45a5a2dfc7400a6306d69 https://doi.org/10.1016/s0022-0248(98)00285-1 Zobrazit plný text záznamu Full Text from ScienceDirect