Effect of adsorbed Sn on Ge diffusivity on Si(111) surface
| Autor: | B. Z. Olshanetsky, A. E. Dolbak |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Diffusion surfactant QC1-999 Analytical chemistry General Physics and Astronomy chemistry.chemical_element 68.35.fx Germanium Thermal diffusivity surface structure Adsorption Nuclear magnetic resonance tin Monolayer surface 68.35.bg Surface diffusion Auger electron spectroscopy low energy electron diffraction Low-energy electron diffraction Physics silicon auger electron spectroscopy 68.43.jk surface diffusion germanium chemistry |
| Zdroj: | Open Physics, Vol 6, Iss 3, Pp 634-637 (2008) |
| ISSN: | 2391-5471 |
| Popis: | The effect of adsorbed Sn as a surfactant on Ge diffusion on a Si(111) surface has been studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The experimental dependence of Ge diffusion coefficients on the Si(111) surface versus temperature in the presence of adsorbed Sn atoms has been measured in the range from 300 to 650°C. It has been shown that at a Sn coverage of about 1 monolayer the mobility of Ge atoms increases by several orders of magnitude. |
| Databáze: | OpenAIRE |
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