Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications
| Autor: | L. Frangou, I. Joumard, Vincent Baltz, K. Akmaldinov, Jeremy Pereira, Clarisse Ducruet, C. Portemont, Jérémy Alvarez-Hérault, Bernard Dieny |
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| Přispěvatelé: | SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CROCUS Technology |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
[PHYS]Physics [physics]
Materials science Spintronics Condensed matter physics Device to device 02 engineering and technology 021001 nanoscience & nanotechnology Magnetic hysteresis Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Nanolithography Exchange bias Ferromagnetism 0103 physical sciences Antiferromagnetism Condensed Matter::Strongly Correlated Electrons Thin film 010306 general physics 0210 nano-technology |
| Zdroj: | IEEE Magnetics Letters IEEE Magnetics Letters, 2015, 6, pp.3000404. ⟨10.1109/lmag.2015.2452891⟩ IEEE Magnetics Letters, IEEE, 2015, 6, pp.3000404. ⟨10.1109/lmag.2015.2452891⟩ |
| ISSN: | 1949-307X |
| DOI: | 10.1109/lmag.2015.2452891⟩ |
| Popis: | International audience; Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated. |
| Databáze: | OpenAIRE |
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