High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation
| Autor: | Wilhelm Kegel, Malte Czernohorsky, Konrad Seidel, Wilfried Lerch, Nicole Sacher, Kati Kühnel, J. Niess |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology Plasma 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 7. Clean energy 01 natural sciences Electron spectroscopy Atomic and Molecular Physics and Optics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Gate oxide Electrical and Electronic Engineering 0210 nano-technology Silicon oxide Tin Metal gate High-κ dielectric |
| Zdroj: | Microelectronic Engineering |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2017.05.041 |
| Popis: | Ultra-thin interfacial silicon oxide layers are grown by microwave-based plasma oxidation at temperatures below 200 °C. The influence of plasma gas composition and plasma pulsing on layer properties is tested. The oxides are compared to standard thermally grown oxide and wet chemical oxide. Layer properties are evaluated by x-ray photo electron spectroscopy and are electrically characterized by means of TiN/HfO 2 /SiO 2 high-k metal gate stacks. |
| Databáze: | OpenAIRE |
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