Influence of Si-N complexes on the electronic properties of GaAsN alloys
| Autor: | Rachel Goldman, Cagliyan Kurdak, T. Dannecker, R. M. Jock, M. Reason, Y. Jin, H. Cheng, James L. Merz, Y. He, Alexander Mintairov |
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| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Materials science
III-V semiconductors Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) Nitrogen Thin films Inorganic chemistry chemistry.chemical_element Electronic structure Growth Annealing Luminescence efficiency Arsenides Doping Thin film growth Thin film Heterojunction Crystallography Molecular-beam epitaxy chemistry Tellurium Layers Ga(as n) Molecular beam epitaxy |
| Popis: | We have investigated the influence of Si-N complexes on the electronic properties of GaAsN alloys. The presence of Si-N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN: Si films but not in modulation-doped heterostructures. In addition, for GaAsN: Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si-N complex formation and a reduced concentration of N-related traps. Since Si-N complex formation is enhanced for GaAsN: Si growth with the (2x4) reconstruction, which has limited group V sites for As-N exchange, the (Si-N)(As) interstitial pair is identified as the dominant Si-N complex. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3198207) |
| Databáze: | OpenAIRE |
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