Enhanced ferroelectric polarization in epitaxial superconducting–ferroelectric heterostructure for non-volatile memory cell
| Autor: | Ravikant, Ram Janay Choudhary, V. R. Reddy, Charanjeet Singh, Ashok Kumar, Manju Singh, R. K. Rakshit, V.N. Ojha, Anjali Panchwanee |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Superconductivity Materials science business.industry General Physics and Astronomy Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Polarization (waves) Epitaxy 01 natural sciences Ferroelectricity lcsh:QC1-999 Non-volatile memory Reciprocal lattice 0103 physical sciences Optoelectronics Thin film 0210 nano-technology business lcsh:Physics |
| Zdroj: | AIP Advances, Vol 10, Iss 7, Pp 075206-075206-6 (2020) |
| ISSN: | 2158-3226 |
| Popis: | We report the growth and polarization switching properties of epitaxial ferroelectric–superconducting heterostructure PbZr0.52Ti0.48O3 (PZT) (100 nm)/YBa2Cu3O7−δ (YBCO) (100 nm) thin films for non-volatile ferroelectric random access memory elements. The epitaxial nature of the heterostructure is verified using the reciprocal space mapping data with the superconducting phase transition temperature (Tc) of nearly 25 K far below the Tc of as-grown YBCO under the same condition. The significant remanent polarization (Pr) ∼ 45 µC/cm2 at 1 kHz can switch from one state to another using 1 μs pulse. The devices meet the basic criteria of memory elements, such as high resistance ∼10 GΩ at 8 V, a butterfly-like capacitance–voltage (C/V) loop, significant polarization, a sharp change in the displacement current, long-time charge retention, and small fatigue at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|