Self-Aligned van der Waals Heterojunction Diodes and Transistors
| Autor: | Jiajia Luo, Junmo Kang, Mark C. Hersam, Itamar Balla, Hadallia Bergeron, Lincoln J. Lauhon, Vinod K. Sangwan, Alex Henning, Hadass Inbar, Megan E. Beck |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Fabrication
Materials science FOS: Physical sciences Bioengineering 02 engineering and technology Applied Physics (physics.app-ph) 010402 general chemistry 01 natural sciences law.invention symbols.namesake law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science Electronics Homojunction Diode Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics business.industry Mechanical Engineering Transistor Materials Science (cond-mat.mtrl-sci) Heterojunction General Chemistry Physics - Applied Physics 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Semiconductor symbols Optoelectronics van der Waals force 0210 nano-technology business |
| Popis: | A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of anti-ambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated anti-ambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with sub-diffraction channel lengths in the range of 150 nm to 800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step towards the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems. |
| Databáze: | OpenAIRE |
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