Kapitza thermal resistance characterization of epitaxial graphene–SiC(0001) interface
| Autor: | Sylvain Potiron, Georges Hamaoui, Adrien Michon, Nicolas Horny, Mihai Chirtoc, Yvon Cordier, Roy Dagher |
|---|---|
| Přispěvatelé: | Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), INSERM UMR-S 926, URCA CHU, Institut National de la Santé et de la Recherche Médicale (INSERM), URCA - UFR Sciences exactes et naturelles (URCA UFR SEN), Université de Reims Champagne-Ardenne (URCA), Institut de Thermique, Mécanique, Matériaux (ITheMM) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
[PHYS]Physics [physics] Materials science Physics and Astronomy (miscellaneous) business.industry Graphene Thermal resistance 02 engineering and technology Substrate (electronics) Chemical vapor deposition 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences law.invention Thermal conductivity law 0103 physical sciences Monolayer Optoelectronics Interfacial thermal resistance [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 0210 nano-technology business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2019, 114 (22), pp.221601. ⟨10.1063/1.5092207⟩ |
| ISSN: | 0003-6951 |
| Popis: | This work presents the measurements of the Kapitza thermal boundary resistance (TBR) between two types of graphene monolayers epitaxially grown on the silicon face of SiC(0001) substrates by chemical vapor deposition. The studied systems consist of a graphene layer either separated from the bulk SiC by a carbon rich interface layer (called buffer layer BL) exhibiting a 6 3 × 6 3 R 30 ° surface reconstruction or quasifreestanding on the substrate, which will be referred to as QFSMG (for the quasifreestanding monolayer of graphene). The equivalent graphene monolayers' thermal resistances (ratio between the layer thickness and its thermal conductivity) and their respective TBR with the SiC substrates were characterized using a high frequency photothermal radiometry technique in order to distinguish the difference between the two interfaces. The results display a larger TBR through the BL compared to a lower one across the QFSMG. It is suggested that beyond generally used models, the presence of electronic coupling between the QFSMG and the SiC may create new channels for heat conduction at the interface. These results give new insights into the thermal transport at the nanoscale using epitaxial graphene monolayers for better usage in heat management applications (e.g., thermal diodes or thermal transistors).This work presents the measurements of the Kapitza thermal boundary resistance (TBR) between two types of graphene monolayers epitaxially grown on the silicon face of SiC(0001) substrates by chemical vapor deposition. The studied systems consist of a graphene layer either separated from the bulk SiC by a carbon rich interface layer (called buffer layer BL) exhibiting a 6 3 × 6 3 R 30 ° surface reconstruction or quasifreestanding on the substrate, which will be referred to as QFSMG (for the quasifreestanding monolayer of graphene). The equivalent graphene monolayers' thermal resistances (ratio between the layer thickness and its thermal conductivity) and their respective TBR with the SiC substrates were characterized using a high frequency photothermal radiometry technique in order to distinguish the difference between the two interfaces. The results display a larger TBR through the BL compared to a lower one across the QFSMG. It is suggested that beyond generally used models, the presence of electro... |
| Databáze: | OpenAIRE |
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