Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications
| Autor: | M. Billet, Emilien Peytavit, G. Ducoumau, J-F. Lampin, Christophe Coinon, Y. Desmet, Xavier Wallart |
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| Přispěvatelé: | Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), This work is supported by the Direction Générale de l’Armement, the RENATECH Network and Lille University, Renatech Network |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Optical fiber Terahertz radiation business.industry Photodetectors Photodetector Optical mixing 02 engineering and technology 01 natural sciences law.invention Photomixing [SPI]Engineering Sciences [physics] 020210 optoelectronics & photonics Optics law Radio frequency 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Optical fibers Optical variables measurement business Cavity resonators |
| Zdroj: | 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2017, Cancun, Mexico. pp.17259249, ⟨10.1109/IRMMW-THz.2017.8067020⟩ |
| DOI: | 10.1109/irmmw-thz.2017.8067020 |
| Popis: | International audience; We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic photoresponse properties have been measured by means of a photomixing experiment up to 67 GHz, showing the potential of this device for GHz and THz applications. |
| Databáze: | OpenAIRE |
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