On Demand Shape-Selective Integration of Individual Vertical Germanium Nanowires on a Si(111) Substrate via Laser-Localized Heating
| Autor: | Eunpa Kim, Bin Xiang, Jae-Hyuck Yoo, Andrew M. Minor, Oscar D. Dubon, Sang-Gil Ryu, Costas P. Grigoropoulos, David J. Hwang |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Scattering General Engineering Nanowire General Physics and Astronomy Hexagonal pyramid chemistry.chemical_element Nanotechnology Germanium Substrate (electronics) Condensed Matter::Materials Science Semiconductor chemistry Optoelectronics General Materials Science Nanodot business Electron-beam lithography |
| Zdroj: | ACS Nano. 7:2090-2098 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/nn400186c |
| Popis: | Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce structures of uniform size and shape. This study overcomes this constraint by applying laser-localized synthesis on catalytic nanodots defined by electron beam lithography in order to accomplish site- and shape-selective direct integration of vertically oriented germanium nanowires (GeNWs) on a single Si(111) substrate. Since the laser-induced local temperature field drives the growth process, each NW could be synthesized with distinctly different geometric features. The NW shape was dialed on demand, ranging from cylindrical to hexagonal/irregular hexagonal pyramid. Finite difference time domain analysis supported the tunability of the light absorption and scattering spectra via controlling the GeNW shape. |
| Databáze: | OpenAIRE |
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