Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography
| Autor: | Remco G.P. Sanders, Roald M. Tiggelaar, G.J. Burger, Han Gardeniers, Erwin Berenschot, Niels Roelof Tas, Chris P. van Kampen |
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| Přispěvatelé: | MESA+ Institute, Mesoscale Chemical Systems, Integrated Devices and Systems |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon Bar (music) molecular flow chemistry.chemical_element 02 engineering and technology displacement talbot lithography 01 natural sciences Monocrystalline silicon NEMS Free molecular flow 0202 electrical engineering electronic engineering information engineering Wafer arrays nano-slit Nanoelectromechanical systems flow restriction business.industry 010401 analytical chemistry convex 22/2 OA procedure Order (ring theory) silicon 020206 networking & telecommunications 0104 chemical sciences Nanolithography chemistry Optoelectronics business anisotropic etching corner lithography nanogap |
| Zdroj: | 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020, 1106-1109 STARTPAGE=1106;ENDPAGE=1109;TITLE=33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 |
| ISSN: | 1084-6999 |
| Popis: | We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ∼360 nm and a width of ∼6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of $25\ \mu \mathrm{g}/\mathrm{s}$ at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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