Semiconducting properties of thin films with embedded nanoparticles

Autor: Loïc J. Blum, Christophe A. Marquette, Carole Farre, Marcus F. Lawrence, Volodymyr Lysenko, Carole Chaix, Mouhssine Benlarbi
Přispěvatelé: Institut de Chimie et Biochimie Moléculaires et Supramoléculaires (ICBMS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie du CNRS (INC)-École Supérieure Chimie Physique Électronique de Lyon-Centre National de la Recherche Scientifique (CNRS), Sciences Analytiques (SA), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Depierre, Frédérique
Rok vydání: 2010
Předmět:
Zdroj: Synthetic Metals
Synthetic Metals, Elsevier, 2010, 160 (23-24), pp.2675-2680
ISSN: 0379-6779
DOI: 10.1016/j.synthmet.2010.10.025
Popis: International audience; We demonstrate here the possibility of designing semiconducting thin films with controlled electrochemical properties. The thin films are composed of (i) an insulating binder and (ii) a semiconductor nanopowder which enables the fine tuning of the semiconducting properties of the layers. Thus, p-and n-type silicon particles (obtained from a top-down technique), or metal-oxide ZnO, SnO(2) and NiO nanoparticles (synthesized using a bottom-up protocol) are successfully integrated into spin-coated or screen-printed thin films and used as semiconducting materials. The flat band potential (Vfb) of the films is then easily tuned from DV to -1.138 V. (C) 2010 Elsevier B.V. All rights reserved.
Databáze: OpenAIRE