Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions
| Autor: | S. Auffret, Nikita Strelkov, A.V. Vedyayev, N. Ryzhanova, Léa Cuchet, Mairbek Chshiev, B. Rodmacq, Maria Titova, Lavinia Elena Nistor, B. Dieny |
|---|---|
| Přispěvatelé: | SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Lomonosov Moscow State University (MSU), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), European Project: 669204,H2020,ERC-2014-ADG,MAGICAL(2015) |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Magnetoresistance Spin Hall effect 02 engineering and technology 01 natural sciences Rashba effect ATMR Condensed Matter::Materials Science Tunnel junction 0103 physical sciences [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 010306 general physics Anisotropy Saturation (magnetic) Quantum tunnelling SOI TAMR Condensed matter physics Conductance Spintronics Spin–orbit interaction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Tunnel magnetoresistance [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Condensed Matter::Strongly Correlated Electrons 0210 nano-technology |
| Zdroj: | Physical Review B Physical Review B: Condensed Matter and Materials Physics (1998-2015) Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 95, pp.064420. ⟨10.1103/PhysRevB.95.064420⟩ Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 95, pp.064420. ⟨10.1103/PhysRevB.95.064420⟩ |
| ISSN: | 2469-9950 1098-0121 1550-235X |
| DOI: | 10.1103/PhysRevB.95.064420 |
| Popis: | International audience; We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit interaction in the insulating barrier. ATMR represents the difference of tunnel magnetoresistance (TMR) amplitude measured with in-plane and out-of-plane magnetic configurations. It is demonstrated that within the spin-polarized free-electron model the change of conductance associated with the ATMR is exactly twice the change of conductance measured at full saturation (i.e., in parallel configuration of magnetizations) between in-plane and out-of-plane configuration, i.e., the tunneling anisotropic magnetoresistance (TAMR). Both ATMR and TAMR are closely related to the TMR amplitude and spin-orbit constant. The predicted ATMR phenomenon is confirmed experimentally, showing a few percent value in the case of the widely studied CoFeB/MgO/CoFeB based MTJ. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|