On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs
| Autor: | Efthymiou, L, Camuso, G, Longobardi, G, Chien, T, Chen, M, Udrea, F |
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| Přispěvatelé: | Longobardi, Giorgia [0000-0001-9994-851X], Udrea, Florin [0000-0002-7288-3370], Apollo - University of Cambridge Repository |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
clamped
III-V semiconductors Control and Optimization Energy Engineering and Power Technology 02 engineering and technology 01 natural sciences inductance GaN 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering enhancement Engineering (miscellaneous) wide band gap semiconductors III–V semiconductors gallium compounds HEMT switching parasitics SPICE Miller capacitance 010302 applied physics Renewable Energy Sustainability and the Environment 020208 electrical & electronic engineering Energy (miscellaneous) |
| Zdroj: | Energies; Volume 10; Issue 3; Pages: 407 |
| ISSN: | 1996-1073 |
| DOI: | 10.3390/en10030407 |
| Popis: | © 2017 by the author. With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed. |
| Databáze: | OpenAIRE |
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