Selective area epitaxy of InGaAs/InGaAsP quantum wells studied by magnetotransport
| Autor: | D.M. Symons, Siu Ling Wong, E J Thrush, Robert W. Martin, M. A. Gibbon, J.P. Stagg, Robin J. Nicholas |
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| Rok vydání: | 1996 |
| Předmět: |
Fabrication
Magnetoresistance Condensed matter physics Chemistry Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Shubnikov–de Haas effect Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Selective area epitaxy Materials Chemistry Electrical and Electronic Engineering Electronic band structure Quantum well |
| Zdroj: | Semiconductor Science and Technology. 11:735-740 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Selective area epitaxy can have a marked effect on the growth of quantum well structures by metal-organic vapour phase epitaxy. An understanding of the resulting modifications to the layer thicknesses and compositions is important for the fabrication of integrated devices. In this paper we present magnetotransport measurements from modulation-doped InGaAs/InGaAsP multi-quantum wells grown on InP substrates patterned with silica masks. The observed increase in carrier density with decreasing width of the conducting channel is related to changes induced by the selective area growth. A self-consistent solution of the Schrodinger and Poisson equations is used to calculate the modifications to the band profile. The occupation of two subbands in one of the structures allows the subband separation to be extracted from the magnetoresistance data, leading to an estimate of the well thickness over three times its nominal value. |
| Databáze: | OpenAIRE |
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