Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
| Autor: | Stephan Menzel, Camilla La Torre, Ulrich Böttger, Nabeel Aslam, Susanne Hoffmann-Eifert, Karsten Fleck |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Hardware_MEMORYSTRUCTURES Materials science Thermal runaway General Physics and Astronomy NAND gate 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Engineering physics Flash (photography) Resistive switching 0103 physical sciences ddc:530 0210 nano-technology Set (psychology) Joule heating Dram Positive feedback |
| Zdroj: | Physical review applied 6(6), 064015 (2016). doi:10.1103/PhysRevApplied.6.064015 |
| ISSN: | 2331-7019 |
| DOI: | 10.1103/physrevapplied.6.064015 |
| Popis: | Identifying limiting factors is crucial for a better understanding of the dynamics of the resistive switching phenomenon in transition-metal oxides. This improved understanding is important for the design of fast-switching, energy-efficient, and long-term stable redox-based resistive random-access memory devices. Therefore, this work presents a detailed study of the set kinetics of valence change resistive switches on a time scale from 10 ns to 104 s, taking Pt/SrTiO3/TiN nanocrossbars as a model material. The analysis of the transient currents reveals that the switching process can be subdivided into a linear-degradation process that is followed by a thermal runaway. The comparison with a dynamical electrothermal model of the memory cell allows the deduction of the physical origin of the degradation. The origin is an electric-field-induced increase of the oxygen-vacancy concentration near the Schottky barrier of the Pt/SrTiO3 interface that is accompanied by a steadily rising local temperature due to Joule heating. The positive feedback of the temperature increase on the oxygen-vacancy mobility, and thereby on the conductivity of the filament, leads to a self-acceleration of the set process. |
| Databáze: | OpenAIRE |
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