Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory

Autor:	Peter Zaumseil, Malgorzata Sowinska, Thomas Schroeder, Jordi Suñé, Damian Walczyk, Andrei Gloskovskii, Christian Walczyk, Xavier Cartoixà, P. Calka, T. Bertaud, Jarek Dabrowski
Rok vydání:	2014
Předmět:	Materials science business.industry Interface (computing) chemistry.chemical_element Nanotechnology Thin film morphology Oxygen Resistive random-access memory chemistry ddc:540 Optoelectronics General Materials Science Reactivity (chemistry) Thin film business Layer (electronics) Deposition (law)
Zdroj:	ACS applied materials & interfaces 6(7), 5056-5060 (2014). doi:10.1021/am500137y
ISSN:	1944-8252 1944-8244
DOI:	10.1021/am500137y
Popis:	The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental–theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fe8ea789f9b6656929197dd2119daac https://doi.org/10.1021/am500137y Zobrazit plný text záznamu