Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Autor:	N. V. Demarina, Yu. I. Koshurinov, D.G. Pavel'ev, A. P. Vasil’ev, Elizaveta Semenova, V. M. Ustinov, A. E. Zhukov
Rok vydání:	2004
Předmět:	Materials science business.industry Terahertz radiation Superlattice Doping Semiconductor device Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Planar Optoelectronics business Ohmic contact Diode
Zdroj:	ResearcherID
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1797494
Popis:	Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 µm2) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (1018 cm−3) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10−7 Ω cm2 at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fbddadec36c72c193e3fcf108ff2ca9 https://doi.org/10.1134/1.1797494 Zobrazit plný text záznamu Plný text ve formátu PDF