Organic Light-Emitting Transistors

Autor: Michele Muccini, Constance Rost-Bietsch, Siegfried Karg, Walter Riess, Maria Antonietta Loi, M. Murgia
Přispěvatelé: Zernike Institute for Advanced Materials, Photophysics and OptoElectronics
Jazyk: angličtina
Rok vydání: 2005
Předmět:
Zdroj: Pacific Rim Conference on Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005, 1106-1108
STARTPAGE=1106;ENDPAGE=1108;TITLE=Pacific Rim Conference on Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005
Popis: A light-emitting OFET with pronounced ambipolar current characteristic has been prepared by co-evaporation of α-quinquethiophene (α-5T) as hole-transport material and ditridecyl-perylene-tetracarboxylic diimide (P13) as electron-transport material. The light intensity is controlled by both the drain-source voltage VDS and the gate voltage V G . Here, we demonstrate the general concept of adjusting electron and hole mobilities by co-evaporation of two different organic semiconductors.
Databáze: OpenAIRE