Model-independent determination of the Migdal effect via photoabsorption
| Autor: | Jiunn-Wei Chen, C.-P. Liu, Hsin-Chang Chi, Chih-Pan Wu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Silicon
Physics::Instrumentation and Detectors Nuclear Theory FOS: Physical sciences chemistry.chemical_element Germanium 01 natural sciences High Energy Physics - Experiment High Energy Physics - Experiment (hep-ex) Cross section (physics) High Energy Physics - Phenomenology (hep-ph) Xenon 0103 physical sciences Physics::Atomic and Molecular Clusters 010306 general physics Electron ionization Physics Argon 010308 nuclear & particles physics Scattering business.industry Computational physics High Energy Physics - Phenomenology Semiconductor chemistry business |
| Zdroj: | Physical Review |
| Popis: | The Migdal effect in a dark-matter-nucleus scattering extends the direct search experiments to the sub-GeV mass region through electron ionization with sub-keV detection thresholds. In this paper, we derive a rigorous and model-independent "Migdal-photoabsorption" relation that links the sub-keV Migdal process to photoabsorption. This relation is free of theoretical uncertainties as it only requires the photoabsorption cross section as the experimental input. Validity of this relation is explicitly checked in the case of xenon with an state-of-the-arts atomic calculation that is well-benchmarked by experiments. The predictions based on this relation for xenon, argon, semiconductor silicon and germanium detectors are presented and discussed. 6 pages, 3 figures |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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