Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell
| Autor: | Lubica Stuchlikova, K. Bielak, Iván Lombardero, Damian Radziewicz, Beata Ściana, M. Florovic, Jarosław Serafińczuk, Wojciech Kijaszek, Wojciech Dawidowski, A. Kosa, Miroslav Mikolášek, Carlos Algora, Jaroslav Kováč, Jakub Drobný |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Technology
Control and Optimization Deep-level transient spectroscopy Materials science Energy Engineering and Power Technology chemistry.chemical_element 02 engineering and technology Epitaxy dilute nitrides 01 natural sciences law.invention law Interstitial defect 0103 physical sciences Solar cell carrier transport mechanism Metalorganic vapour phase epitaxy GaAsN Electrical and Electronic Engineering Engineering (miscellaneous) reciprocal lattice maps 010302 applied physics J-V-T measurements Atmospheric pressure Renewable Energy Sustainability and the Environment business.industry solar cell recombination thermionic field emission DLTS spectroscopy defects nitrogen interstitial Atmospheric temperature range 021001 nanoscience & nanotechnology Nitrogen chemistry Optoelectronics 0210 nano-technology business Energy (miscellaneous) |
| Zdroj: | Energies, Vol 14, Iss 4651, p 4651 (2021) Energies; Volume 14; Issue 15; Pages: 4651 |
| ISSN: | 1996-1073 |
| Popis: | Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation. |
| Databáze: | OpenAIRE |
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