Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
| Autor: | Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini, Rosana Rodriguez, M. Maestro |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Flash memory Electronic Optical and Magnetic Materials Threshold voltage chemistry Resistive switching 0103 physical sciences Electrode Scalability Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Silicon oxide Storage class memory |
| Zdroj: | IEEE Transactions on Electron Devices |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2017.2777986 |
| Popis: | The cross-point architecture for memory arrays is widely considered as one of the most attractive solutions for storage and memory circuits thanks to simplicity, scalability, small cell size, and consequently high density and low cost. Cost-scalable vertical 3-D cross-point architectures, in particular, offer the opportunity to challenge Flash memory with comparable density and cost. To develop scalable cross-point arrays, however, select devices with sufficient ON–OFF ratio, current capability, and endurance must be available. This paper presents a select device technology based on volatile resistive switching with Cu and Ag top electrode and silicon oxide (SiO x ) switching materials. The select device displays ultrahigh resistance window and good current capability exceeding 2 MAcm−2. Retention study shows a stochastic voltage-dependent ON–OFF transition time in the ${10}~\mu \text{s}$ –1 ms range, which needs to be further optimized for fast memory operation in storage class memory arrays. |
| Databáze: | OpenAIRE |
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