| Autor: |
Cho, H.K., Kang, J.H., Sulmoni, L., Kunkel, K., Rass, J., Susilo, N., Wernicke, T., Einfeldt, S., Kneissl, M. |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Popis: |
The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting at 265 nm is investigated. A two-step plasma etching process with a first rapid etching using BCl3/Cl2 gas mixture and a second slow etching step using pure Cl2 gas has been developed. The etching sequence provides smooth mesa side-walls and an n-AlGaN surface with reduced surface damage. Ohmic n-contacts with a contact resistivity of 3.5 10-4 ��cm2 are obtained on Si-doped Al0.65Ga0.35N layers and the operating voltages of the UVC LEDs were reduced by 2 V for a current of 20 mA. �� 2020 The Author(s). Published by IOP Publishing Ltd. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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