Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires
| Autor: | Nicolas Tappy, Nicholas Morgan, Lucas Güniat, Martin Friedl, M Nahra, C Couteau, Santhanu Panikar Ramanandan, Didem Dede, Wonjong Kim, Akshay Balgarkashi, A. Fontcuberta i Morral, Jean-Baptiste Leran |
|---|---|
| Přispěvatelé: | Couteau, Christophe, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lumière, nanomatériaux et nanotechnologies (L2n), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Facet (geometry)
Materials science growth strain relaxation Nanowire Physics::Optics quantum dots 02 engineering and technology 01 natural sciences Condensed Matter::Materials Science Optics [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph] molecular beam epitaxy emission 0103 physical sciences 010306 general physics ComputingMilieux_MISCELLANEOUS [PHYS.QPHY] Physics [physics]/Quantum Physics [quant-ph] business.industry single-photon sources Heterojunction heterostructure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials nanowires Quantum dot Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Journal of Optics Journal of Optics, 2020, 22, pp.084002 |
| ISSN: | 0013-4651 1367-2630 |
| Popis: | Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski–Krastanov growth mechanism. Here, we propose a novel strain-driven mechanism to form 3D In-rich clusters on the NW sidewalls and also on the NW top facets. The focus is on ternary InGaAs nanowire quantum dots which are particularly attractive for producing single photons at telecommunication wavelengths. In(Ga)As clusters were realized on the inclined top facets and also on the {11-2} corner facets of GaAs NW arrays by depositing InAs at a high growth temperature (630 °C). High-angle annular dark-field scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy confirms that the observed 3D clusters are indeed In-rich. The optical functionality of the as-grown samples was verified using optical technique of cathodoluminescence. Emission maps close to the NW tip shows the presence of optically active emission centers along the NW sidewalls. Our work illustrates how facets can be used to engineer the growth of localized emitters in semiconducting NWs. |
| Databáze: | OpenAIRE |
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