A generalized EKV charge-based MOSFET model including oxide and interface traps
| Autor: | Christian Enz, Giulio Borghello, Chun-Min Zhang, Andrea Baschirotto, Serena Mattiazzo, Farzan Jazaeri |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Charge-based modeling
Materials science Silicon Oxide chemistry.chemical_element 02 engineering and technology 01 natural sciences chemistry.chemical_compound Radiation damage 0103 physical sciences MOSFET Materials Chemistry Nuclear Physics - Experiment Electrical and Electronic Engineering Detectors and Experimental Techniques Interface traps MobileCharge linearization 010302 applied physics Range (particle radiation) EKV business.industry 28-nm bulk MOSFETs Velocity saturation Charge (physics) 021001 nanoscience & nanotechnology Condensed Matter Physics Oxide-trapped charges Electronic Optical and Magnetic Materials chemistry CMOS Optoelectronics Defects Device reliability Total ionizing dose 0210 nano-technology business Voltage Charge-trapping |
| Popis: | This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface-trapped charges, the mobile charge density can still be linearized but with respect to both the surface potential and the channel voltage. This enables us to derive closed-form expressions for the mobile charge density and the drain current. These simple formulations demonstrate the effects of charge trapping on MOSFET characteristics and crucial device parameters. The proposed charge-based analytical model, including the effect of velocity saturation, is successfully validated through measurements performed on devices from a 28-nm bulk CMOS technology. Ultrahigh total ionizing doses up to 1 Grad(SiO2) are applied to generate oxide-trapped charges and activate passivated interface traps. Despite a small number of parameters, the model is capable of accurately capturing measurement results over a wide range of device operation from weak to strong inversion. Explicit expressions of device parameters also allow for the extraction of the oxide- and interface-trapped charge densities. |
| Databáze: | OpenAIRE |
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