Phonon Engineering in Nanoscale Layered Structures

Autor:	A. Rostami, A. Alizade, H. Bagban, T. Alizade, H. Balazadeh Bahar
Rok vydání:	2010
Předmět:	Condensed Matter::Materials Science Thermal conductivity Nanostructure Materials science Condensed matter physics Phonon Wide-bandgap semiconductor Group velocity Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Thermal conduction Boltzmann equation
Zdroj:	Optoelectronic Materials and Devices V.
DOI:	10.1364/acp.2010.79870f
Popis:	GaN/AlGaN heterostructure thermal conductivity is investigated considering steady-state phonon Boltzman equation and relaxation-time approximation using phonon density of states, average group velocity and phonon relaxation time. It has concluded that proper selection of layer widths yields minimum thermal conduction for considered structure. Also, making asymmetric structure, affects the thermal conduction.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e9818408de82b95d05625032f0cf38a https://doi.org/10.1364/acp.2010.79870f Zobrazit plný text záznamu