Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating
| Autor: | Tetsuya Goto, Akira Suwa, Takayuki Kurashige, Kaname Imokawa, Hiroshi Ikenoue, Taizoh Sadoh, Daisuke Nakamura |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Fabrication
Materials science chemistry.chemical_element engineering.material thin-film-transistor (TFT) law.invention Coating law Aluminium laser doping Electrical and Electronic Engineering business.industry excimer laser annealing (ELA) Phosphorus Low temperature poly Si (LTPS) Doping chemical solution coating Laser Electronic Optical and Magnetic Materials chemistry CMOS Thin-film transistor engineering Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering business lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 8, Pp 27-32 (2020) |
| ISSN: | 2168-6734 |
| Popis: | We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented. |
| Databáze: | OpenAIRE |
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