Dual-gate Organic Field-Effect Transistrors as Potentiometric Sensors an Aqueous Solution
| Autor: | Tom C. T. Geuns, Fabio Biscarini, Francesco Zerbetto, Pablo Stoliar, Edsger C. P. Smits, J. J. Brondijk, Tobias Cramer, M. Spijkman, Dago M. de Leeuw, Paul W. M. Blom |
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| Přispěvatelé: | Spijkman M.-J., Brondijk J.J., Geuns T.C.T., Smits E. C. P., Cramer T., Zerbetto F., Stoliar P., Biscarini F., Blom P. W. M., de Leeuw D. M ., Zernike Institute for Advanced Materials |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Passivation PROTEINS Gate dielectric Analytical chemistry HOL - Holst DEVICE 02 engineering and technology 010402 general chemistry MONOLAYER 01 natural sciences law.invention Biomaterials symbols.namesake law Electrochemistry VOLTAGE Debye length Organic Electronics TS - Technical Sciences business.industry Transistor BIOLOGICAL SENSORS Mechatronics Mechanics & Materials ISFETS DNA 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Threshold voltage IMMUNOFET Semiconductor chemical sensors dual-gate transistors ion-sensitive field-effect transistors (ISFET) pH threshold voltage symbols Field-effect transistor Electronics Organic Transistor 0210 nano-technology business Biosensor Voltage |
| Zdroj: | Advanced functional materials 20 (2010): 898–905. doi:10.1002/adfm.200901830 info:cnr-pdr/source/autori:Spijkman, Mark-Jan (1),(2); Brondijk, Jakob J. (1); Geuns Tom C. T. (2); Smits, Edsger C. P. (3); Cramer, Tobias (4); Zerbetto, Francesco (4); Stoliar, Pablo (5); Biscarini, Fabio (5); Blom, Paul W. M. (1),(3); de Leeuw, Dago M.(1),(2)*/titolo:Dual-gate Organic Field-Effect Transistrors as Potentiometric Sensors an Aqueous Solution/doi:10.1002%2Fadfm.200901830/rivista:Advanced functional materials (Print)/anno:2010/pagina_da:898/pagina_a:905/intervallo_pagine:898–905/volume:20 Advanced Functional Materials, 20(6), 898-905. WILEY-V C H VERLAG GMBH Advanced Materials, 898-905 |
| ISSN: | 1616-301X |
| DOI: | 10.1002/adfm.200901830 |
| Popis: | Buried electrodes and protection of the semiconductor with a thing passivation layer are used to yield dual gate organic transducers. The process technology is scaled up to 150 mm wafers. The transducers are potentiometric sensors where the detectors relies on measuring a shift in the threshold voltage caused by changes in the electrochemical potential at the second gate dielectric. Analytes can only be detected within the Debye screeing length. The mechanism is assessed by pH measurements. The threshold voltage shift depends on pH as Delta V(th) = (C(top)/C(bottom)) x 58 mV per pH unit, indicating that the sensitivity can be enhanced with respect to conventional ion-sensitive field-effect transistors (ISFETs) by adjusting the ratio of the top and bottom gate capacitances. Remaining challenges and opportunities are discussed. |
| Databáze: | OpenAIRE |
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