Structural and photoconductivity properties of silicon carbon thin films
| Autor: | D. K. Basa, Ubaldo Coscia, Simona Binetti, Valentino Rigato, Giuseppina Ambrosone |
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| Přispěvatelé: | Coscia, U, Ambrosone, G, Basa, D, Rigato, V, Binetti, S, Coscia, Ubaldo, Ambrosone, Giuseppina, D. K., Basa, V., Rigato, S., Binetti |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Amorphous silicon
Materials science Silicon Hydrogen Band gap Photoconductivity Analytical chemistry chemistry.chemical_element Condensed Matter Physics chemistry.chemical_compound CHIM/02 - CHIMICA FISICA chemistry nanostructured films silicon carbon alloys structural properties photoconductivity Crystallite Thin film Carbon |
| Popis: | Nanostructured films composed of silicon crystallites dispersed in an hydrogenated amorphous silicon carbon matrix have been deposited by plasma enhanced chemical vapour deposition from silane-methane mixtures diluted in hydrogen by varying the rf power. Compositional, structural, optical and photoconductivity properties of the films have been investigated. The increase in rf power in the 40-80 W range enhances the incorporation of carbon and hydrogen in the amorphous matrix and decreases the volume fraction and size of the silicon crystallites leading to an enlargement of the optical band gap from 2.07 to 2.20 eV. Steady state photoconductivity measurements, performed under monochromatic radiations in the visible range, have demonstrated the occurrence of monomolecular recombination kinetics in the samples under illumination and that the mobility-lifetime product of the free electrons as a function of the optical gap decreases from 1.9 × 10–7 to 2.5 × 10–9 cm2V–1 as in the case of device quality films deposited by silane-methane mixtures diluted in hydrogen. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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