Autor: |
Max A. Migliorato, Mark Hopkinson, Huiyun Liu, Matthew J. Steer, R. Garg, V. Haxha, D. J. Mowbray, JM José Maria Ulloa, I. Drouzas, PM Paul Koenraad |
Přispěvatelé: |
Photonics and Semiconductor Nanophysics, Semiconductor Nanostructures and Impurities |
Rok vydání: |
2009 |
Předmět: |
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Zdroj: |
Microelectronics Journal, 40(3), 533-536. Elsevier |
ISSN: |
0026-2692 |
DOI: |
10.1016/j.mejo.2008.06.051 |
Popis: |
In this paper, we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents and that the theoretical behaviour appears to be substantiated by experimental evidence of growth of InAs self-assembled quantum dots capped by GaSbAs. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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