CMOS sensors in 90nm fabricated on high resistivity wafers: Design concept and irradiation results
| Autor: | J. Wyss, L. Silvestrin, H. Mugnier, A. Marchioro, P. Chalmet, Devis Pantano, A. Potenza, C. Mansuy, Angelo Rivetti, Y. Ikemoto, Michele Caselle, Piero Giubilato, Natale Demaria, Kostas Kloukinas, J. Rousset, Marco Battaglia, Mário Costa, Dario Bisello |
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| Rok vydání: | 2013 |
| Předmět: |
Physics
Nuclear and High Energy Physics business.industry Context (language use) Integrated circuit CMOS technologies law.invention Radiation tolerance Lightly doped substrates CMOS law Electrical resistivity and conductivity Hardware_INTEGRATEDCIRCUITS Measuring instrument Optoelectronics Wafer Monolithic sensors business Instrumentation Radiation hardening Electronic circuit |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 730:119-123 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/j.nima.2013.06.068 |
| Popis: | The LePix project aims at improving the radiation hardness and the readout speed of monolithic CMOS sensors through the use of standard CMOS technologies fabricated on high resistivity substrates. In this context, high resistivity means beyond 400 Ω cm , which is at least one order of magnitude greater than the typical value ( 1 – 10 Ω cm ) adopted for integrated circuit production. The possibility of employing these lightly doped substrates was offered by one foundry for an otherwise standard 90 nm CMOS process. In the paper, the case for such a development is first discussed. The sensor design is then described, along with the key challenges encountered in fabricating the detecting element in a very deep submicron process. Finally, irradiation results obtained on test matrices are reported. |
| Databáze: | OpenAIRE |
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