Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects
Autor: | Tuan-Khoa Nguyen, Nam-Trung Nguyen, Hoang-Phuong Phan, Afzaal Qamar, Takahiro Namazu, Toan Dinh, Takahiro Kozeki, Dzung Viet Dao |
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Jazyk: | angličtina |
Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Materials science Physics - Instrumentation and Detectors Physics and Astronomy (miscellaneous) Condensed Matter - Mesoscale and Nanoscale Physics business.industry Wide-bandgap semiconductor Nanowire technology industry and agriculture FOS: Physical sciences Instrumentation and Detectors (physics.ins-det) 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Piezoresistive effect Electrical resistance and conductance Nanosensor Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Nano Optoelectronics Surface charge 0210 nano-technology business |
Popis: | This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications. 4 pages, 5 figures |
Databáze: | OpenAIRE |
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