Nonlinear Behavior Analysis of GaAs PHEMT Transconductance to Design Active Frequency Multipliers

Autor: Said Mazer, Maryam Abata, Moulhime El Bekkali, Catherine Algani, Mahmoud Mehdi
Přispěvatelé: Université Sidi Mohamed Ben Abdellah (USMBA), Lebanese University [Beirut] (LU), Electronique, Systèmes de communication et Microsystèmes (ESYCOM), Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris-Conservatoire National des Arts et Métiers [CNAM] (CNAM), Conservatoire National des Arts et Métiers [CNAM] (CNAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris
Jazyk: angličtina
Rok vydání: 2016
Předmět:
Zdroj: International Journal on Communications Antenna and Propagation
International Journal on Communications Antenna and Propagation, Praise Worthy Prize, 2016, 6 (5), pp.299. ⟨10.15866/irecap.v6i5.10239⟩
ISSN: 2039-5086
2533-2929
Popis: This paper discusses the nonlinear behavior of the transconductance of a GaAs PHEMT device and its dependence with the harmonic generation. The analytic study and simulations show that when the gate bias is close to the pinch-off voltage, the transconductance is zero and the extracting of the even harmonics occurs, besides, when this bias is around 0 V, the transconductance is maximized and the odd harmonics are generated. As an example to validate this dependence, a frequency quadrupler based on 0.15 μm PHEMT from UMS foundry using ADS software from Agilent is presented in this work.
Databáze: OpenAIRE