Nonlinear Behavior Analysis of GaAs PHEMT Transconductance to Design Active Frequency Multipliers
| Autor: | Said Mazer, Maryam Abata, Moulhime El Bekkali, Catherine Algani, Mahmoud Mehdi |
|---|---|
| Přispěvatelé: | Université Sidi Mohamed Ben Abdellah (USMBA), Lebanese University [Beirut] (LU), Electronique, Systèmes de communication et Microsystèmes (ESYCOM), Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris-Conservatoire National des Arts et Métiers [CNAM] (CNAM), Conservatoire National des Arts et Métiers [CNAM] (CNAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
0209 industrial biotechnology
Engineering Computer Networks and Communications business.industry Frequency multiplier Transconductance Electrical engineering 02 engineering and technology High-electron-mobility transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect [SPI.TRON]Engineering Sciences [physics]/Electronics Nonlinear system 020303 mechanical engineering & transports 020901 industrial engineering & automation 0203 mechanical engineering Hardware and Architecture Operational transconductance amplifier Harmonics Signal Processing Media Technology High harmonic generation Electrical and Electronic Engineering business ComputingMilieux_MISCELLANEOUS Voltage |
| Zdroj: | International Journal on Communications Antenna and Propagation International Journal on Communications Antenna and Propagation, Praise Worthy Prize, 2016, 6 (5), pp.299. ⟨10.15866/irecap.v6i5.10239⟩ |
| ISSN: | 2039-5086 2533-2929 |
| DOI: | 10.15866/irecap.v6i5.10239⟩ |
| Popis: | This paper discusses the nonlinear behavior of the transconductance of a GaAs PHEMT device and its dependence with the harmonic generation. The analytic study and simulations show that when the gate bias is close to the pinch-off voltage, the transconductance is zero and the extracting of the even harmonics occurs, besides, when this bias is around 0 V, the transconductance is maximized and the odd harmonics are generated. As an example to validate this dependence, a frequency quadrupler based on 0.15 μm PHEMT from UMS foundry using ADS software from Agilent is presented in this work. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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