Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C
| Autor: | Keizo Takemasa, Satoshi Iwamoto, Katsuaki Tanabe, Yuan-Hsuan Jhang, Reio Mochida, Yasuhiko Arakawa, Mitsuru Sugawara |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Extinction ratio business.industry Photonic integrated circuit 02 engineering and technology Direct bonding 021001 nanoscience & nanotechnology Laser Atomic and Molecular Physics and Optics Semiconductor laser theory law.invention 020210 optoelectronics & photonics Optics Quantum dot laser Modulation law Quantum dot 0202 electrical engineering electronic engineering information engineering Optoelectronics 0210 nano-technology business |
| Zdroj: | Optics express. 24(16) |
| ISSN: | 1094-4087 |
| Popis: | We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry-Perot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a cavity was formed using cleaved facets without HR/AR coatings. The bonded laser was operated under continuous-wave pumping at room temperature with a threshold current of 41 mA and a maximum output power of 30 mW (single facet). Even with such a simple device structure and fabrication process, our bonded laser is directly modulated using a 10 Gbps non-return-to-zero signal with an extinction ratio of 1.9 dB at room temperature. Furthermore, 6 Gbps modulation with an extinction ratio of 4.5 dB is achieved at temperatures up to 60 °C without any current or voltage adjustment. These results of device performances indicate an encouraging demonstration on III-V QD lasers on Si for the applications of the photonic integrated circuits. |
| Databáze: | OpenAIRE |
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