Temperature effect on antenna protection strategy for plasma-process induced charging damage

Autor:	Sander M. Smits, Cora Salm, F.G. Kuper, A. Scarpa, Zhichun Wang
Rok vydání:	2003
Předmět:	Materials science METIS-206348 business.industry Process (computing) Optoelectronics Plasma deposition Plasma Antenna (radio) IR-43321 business EWI-15602 Thin oxide Diode
Zdroj:	7th International symposium of Plasma Process-Induced Damage, 134-137 STARTPAGE=134;ENDPAGE=137;TITLE=7th International symposium of Plasma Process-Induced Damage
DOI:	10.1109/ppid.2002.1042627
Popis:	The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma-process induced damage (PPID) is proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ccf1901d93f02a09a028a8b0d00b419 https://doi.org/10.1109/ppid.2002.1042627 Zobrazit plný text záznamu