A 3D pn junction structure for radiation energy conversion chip

Autor:	Zhengyin Yu, Shaohui Xu, Lianwei Wang, Weili Lu, Zhitang Song, Xin-Ping Qu, Guo-Ping Ru, Jinlong Li
Rok vydání:	2006
Předmět:	Materials science Silicon business.industry Anodizing Radiant energy chemistry.chemical_element Radiation Chip chemistry Electronic engineering Optoelectronics Well-defined Diffusion (business) business p–n junction
Zdroj:	Scopus-Elsevier
DOI:	10.1109/iwjt.2006.1669463
Popis:	Macroporous silicon with well defined pattern on p-type silicon has been prepared by anodization in this report. A phosphorus diffusion step is employed for the formation of three dimensional pn junction structures. The I-V and C-V have been performed to characterize the "high aspect ratio" pn junction structure. Results have indicated the possibility for such a structure as the radiation conversion chip for future portable nuclear power cell.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cc9f3d28d5182254adb5ed761453774 https://doi.org/10.1109/iwjt.2006.1669463 Zobrazit plný text záznamu