Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy
| Autor: | J. Saarilahti, J. Antson, Sven Lindfors, H. Kattelus, Markku Ylilammi |
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| Jazyk: | angličtina |
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Thin layers Inorganic chemistry Metals and Alloys Tantalum Relative permittivity chemistry.chemical_element Equivalent oxide thickness Surfaces and Interfaces Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Materials Chemistry Atomic layer epitaxy Thin film Composite material Graphene oxide paper |
| Zdroj: | Kattelus, H, Ylilammi, M, Saarilahti, J, Antson, J & Lindfors, S 1993, ' Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy ', Thin Solid Films, vol. 225, no. 1-2, pp. 296-298 . https://doi.org/10.1016/0040-6090(93)90173-M |
| ISSN: | 1879-2731 0040-6090 |
| DOI: | 10.1016/0040-6090(93)90173-M |
| Popis: | Insulating films consisting of thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O. The average film composition can be modified between pure aluminum oxide and pure tantalum oxide by varying the pulsing ratio. The effective refractive index is adjustable between 1.67 and 2.23 and the relative permittivity between 8.4 and 24. The leakage current of tantalum oxide is significantly reduced by thin interposed layers of aluminum oxide. These multilayers will potentially be useful, for example for applications in future memory integrated circuit and large-area display technologies. |
| Databáze: | OpenAIRE |
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