Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP_2
Autor: | K. S. Jat, Vipin Nagpal, Satyabrata Patnaik |
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Rok vydání: | 2021 |
Předmět: |
Field (physics)
Magnetoresistance Weyl semimetal FOS: Physical sciences 02 engineering and technology 01 natural sciences Condensed Matter - Strongly Correlated Electrons Condensed Matter::Materials Science Electrical resistivity and conductivity 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Electrical and Electronic Engineering Saturation (magnetic) Scaling 010302 applied physics Physics Condensed Matter - Materials Science Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Strongly Correlated Electrons (cond-mat.str-el) Scattering Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Magnetic field Condensed Matter - Other Condensed Matter Condensed Matter::Strongly Correlated Electrons 0210 nano-technology Other Condensed Matter (cond-mat.other) |
DOI: | 10.48550/arxiv.2108.13981 |
Popis: | Topological materials with extremely large magnetoresistance exhibit a prognostic feature of resistivity turn-on behaviour. This occurs when the temperature dependence of resistivity ρ ( T ) changes from metallic to semiconducting characteristics on application of external magnetic field above a threshold value. Here, we study the magneto-transport properties of type-II Weyl Semimetal WP2. The zero field electrical resistivity in the low temperature region indicates the dominant electron-phonon scattering. The saturation in ρ ( T ) curves under all applied magnetic fields are observed at low temperatures. A minimum in resistivity at ~40K is revealed in the temperature derivative of resistivity curves, which implies onset of field induced turn-on effect. Furthermore, a non-saturating linear magnetoresistance (MR) is observed above ~ 5 T which is generally assigned to linear energy dispersion near the Weyl nodes. However, Kohler's scaling fits the data well with resistivity ρ ~ ( B / ρ 0 ) m that implicitly explains the turn-on behaviour and the resistivity minimum. Thus, semi-classical theories of magnetoresistance are consistent with our data without the need to invoke topological surface states. Our findings in this work provides an alternative basis to understand the temperature dependence of magnetoresistance in topological materials. |
Databáze: | OpenAIRE |
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