Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
| Autor: | Fabiana Rampazzo, Enrico Zanoni, Gaudenzio Meneghesso, Z. Gao, Riad Kabouche, Farid Medjdoub, Kathia Harrouche, Matteo Meneghini, Carlo De Santi, F. Chiocchetta, Etienne Okada |
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| Přispěvatelé: | Department of Information Engineering [Padova] (DEI), Universita degli Studi di Padova, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), PCMP CHOP, Università degli Studi di Padova = University of Padua (Unipd), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
02 engineering and technology Trapping Electroluminescence 01 natural sciences Stress (mechanics) stress Electric field 0103 physical sciences [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Leakage (electronics) 010302 applied physics reliability business.industry AINIGaN HEMTs breakdown mechanism electric field radio frequency AlN/GaN HEMTs 021001 nanoscience & nanotechnology Threshold voltage Logic gate Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2020, Singapour, Singapore. pp.1-6, ⟨10.1109/IPFA49335.2020.9260793⟩ |
| DOI: | 10.1109/IPFA49335.2020.9260793⟩ |
| Popis: | International audience; Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in the nine device groups, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may correspond to dislocations and act as preferential paths for electron trapping. Degradation is therefore preliminary attributed to hot-electron trapping, enhanced by electric fields. |
| Databáze: | OpenAIRE |
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