Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
| Autor: | Alexis Franquet, Matty Caymax, Federica Gencarelli, Jelle Demeulemeester, Johan Meersschaut, Kristiaan Temst, Benjamin Vincent, Wilfried Vandervorst, Hugo Bender, André Vantomme, Alain Moussa, Marc Heyns, Roger Loo, Arul Kumar |
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| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Materials science Strain (chemistry) Condensed matter physics Bowing Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials 0103 physical sciences Relaxation (physics) 0210 nano-technology Critical thickness |
| Zdroj: | ECS Journal of Solid State Science and Technology. 2:P134-P137 |
| ISSN: | 2162-8777 2162-8769 |
| Popis: | In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown GeSn layers with Sn content in the range 6.4-12.6 at.%. A positive deviation from Vegard's law was observed and a new experimental bowing parameter was extracted for GeSn: bGeSn = 0.041 Å (in excellent agreement with recent theoretical predictions). The GeSn critical thickness for strain relaxation as a function of Sn concentration was determined, resulting in significantly higher values than those predicted by equilibrium models. A composition-dependent strain relaxation mechanism was also found, with the formation of an increasing density of GeSn pyramidal islands in addition to misfit dislocations at lower Sn concentration. © 2013 The Electrochemical Society. ispartof: ECS Journal of Solid State Science and Technology vol:2 issue:4 pages:P134-P137 status: published |
| Databáze: | OpenAIRE |
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