AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
| Autor: | Eric Gautron, B.J. Gómez, J. Bürgi, Mohamed Abdou Djouadi, B. Abdallah, Pierre-Yves Jouan, Javier García Molleja, Jorge Feugeas, J Ferrón |
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| Rok vydání: | 2013 |
| Předmět: |
Recubrimientos y Películas
Materials science INGENIERÍAS Y TECNOLOGÍAS Sputter deposition Nitride Condensed Matter Physics Electronic Optical and Magnetic Materials Sputtering Ingeniería de los Materiales visual_art visual_art.visual_art_medium Film growth Crystallite Ceramic Thin film Composite material High-resolution transmission electron microscopy Instrumentation Layer (electronics) Magnetron sputtering Aluminum nitride |
| Zdroj: | The European Physical Journal Applied Physics. 64:20302 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap/2013130445 |
| Popis: | Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour. Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina. Institut des Matériaux Jean Rouxel; Francia Fil: Gomez, Bernardo Jose Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Física del Litoral; Argentina Fil: Gautron, Eric. Institut des Matériaux Jean Rouxel; Francia Fil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina Fil: Abdallah, Bassam. Institut des Matériaux Jean Rouxel; Francia. Atomic Energy Commission of Syria. Physics Department; Siria Fil: Djouadi, Mohamed Abdou. Institut des Matériaux Jean Rouxel; Francia Fil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina Fil: Jouan, Pierre-Yves . Institut des Matériaux Jean Rouxel; Francia |
| Databáze: | OpenAIRE |
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