Substrate resistivity influence on silicon–germanium phototransistor performance
| Autor: | Zerihun Gedeb Tegegne, Giovanni Tartarini, Jean-Luc Polleux, Carlos Viana, Jacopo Nanni |
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| Přispěvatelé: | Tegegne Z.G., Nanni J., Viana C., Tartarini G., Polleux J.-L. |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon business.industry fungi Bipolar junction transistor technology industry and agriculture chemistry.chemical_element Substrate (electronics) silicon heterojunction bipolar transistors phototransistors Ge-Si alloys elemental semiconductors electrical resistivity equipment and supplies Silicon-germanium Photodiode law.invention Substrate resistivity Responsivity chemistry.chemical_compound chemistry law Electrical resistivity and conductivity parasitic diseases Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Electronics Letters. 55:656-658 |
| ISSN: | 1350-911X 0013-5194 |
| Popis: | This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low- and the high-resistive silicon substrate are compared. The phototransistor based on low-resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz). |
| Databáze: | OpenAIRE |
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