Low-temperature instabilities of the electrical properties of Cd0.96Zn0.04Te:Cl semi-insulating crystals
| Autor: | A. V. Savitskii, S. N. Chupyra, N. D. Vakhnyak, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ul'yanitskii |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Photoluminescence
Chemistry Analytical chemistry Non-equilibrium thermodynamics chemistry.chemical_element Activation energy Atmospheric temperature range Condensed Matter Physics Copper Atomic and Molecular Physics and Optics Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Crystallography Impurity Semi insulating |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1992628 |
| Popis: | The electrical properties in the temperature range 295–430 K and low-temperature (4.2 K) photoluminescence of Cd1−xZnxTe:Cl semi-insulating crystals grown from melts with a variable impurity content (CCl0 = 5 × 1017–1 × 1019 cm−3) are investigated. Nonequilibrium processes leading to a decrease in carrier concentration are observed in all the samples at low temperatures (T = 330–385 K). These changes are reversible. The activation energy of these processes Ea is found to be 0.88 eV. As with semi-insulating CdTe:Cl, the observed phenomena can be explained by a change in the charge state of background copper atoms: CuCd ↔ Cui. The introduction of Zn changes the ratio of the concentrations of shallow-level donors Cui and ClTe from their levels in the initial material. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|